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Beijing, China, 2016.7.31 - 2016.8.5
33rd International Conference on the Physics of Semiconductors

ICPS 2016


List of the Best Student Poster Award Winners


Best Student Poster Presentations on Monday

    Xianghai Ji, Institute of Semiconductors, CAS, China,
    Mo-P.021: InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

    Guanqun Zhang, Peking University, China,
    Mo-P.082: Quantum Dot Behavior in Graphene Cavity Structures

    Jian Huang, University of Oxford, UK,
    Mo-P.084: Breakdown of the quantum Hall effect and charge transfer in epitaxial graphene at high magnetic fields

    Jiang-Bin Wu, Institute of Semiconductors, CAS, China,
    Mo-P.088: Interface coupling in twisted multillayer graphene by resonance Raman spectroscopy

    Jialiang Deng, University of Science and Technology of China,
    Mo-P.096:Two-dimensional graphene-like planar stanene on Cu(111) surface

    Jinhua Zhi, Peking University, China,
    Mo-P.115:Proximity effect induced supercurrent in InSb nanosheet-superconductor hybrid devices

    Sen Li, Peking University, China,
    Mo-P.148: Tunable 0-π junction in hybrid superconductor-InSb nanowire quantum dot devices

    Se-Jung Jang, University of Ulsan, South Korea,
    Mo-P.210: Enhanced efficiency of organic solar cell with Cu2ZnSnS4 nanoparticle

    Ruben Seoane Souto, Universidad Autonoma de Madrid, Spain,
    Mo-P.245: Transient dynamics and full counting statistics in interacting nanojunctions

    Monica Benito, Insitute Material Sciences CSIC Madrid, Spain,
    Mo-P.259: Floquet engineering the Kitaev model: Low-frequency Floquet Majorana fermions and long-range superconductivity


Best Student Poster Presentations on Tuesday

    Mao Wang, Helmholtz-Zentrum Dresden-Rossendorf, Germany,
    Tu-P.062: Electrical conduction and negative magnetoresistance in tellurium-hyperdoped silicon

    Linjie Zhan, Xiamen University, China,
    Tu-P.100: MoS2 synthesized on SiO2/Si substrates by adopting MoO3 source materials via MBE

    Zhengguang Lu, National High Magnetic Field Laboratory, USA,
    Tu-P.103: Linearly polarized excitons in ReS2

    Jun Wang, Fudan University, China,
    Tu-P.121: Purcell effect in an organic-inorganic Halide Perovskite semiconductor microcavity system

    Yumei Jing, Peking University, China,
    Tu-P.123: Nano Fabrications and Transport Characterizations of Bi2Te3 Quantum Dot Devices

    Yanan Li, Peking University, China,
    Tu-P.126: ZBCP in point contact measurement of type-II Weyl semimetal MoTe2

    Tingxin Li, Peking University, China,
    TU-P.127: Length Dependence Measurements of the Helical Edge Conductance in InAs/GaSb two-dimensional (2D) Topological Insulators

    Michael Kammermeier, University of Regensburg, Germany,
    Tu-P.174: Weak (Anti-) localization in tubular semiconductor nanowires with spin-orbit coupling

    Sungguen Ryu, KAIST, South Korea,
    Tu-P.256: Gigahertz emission and detection of a single-electron gaussian wave packet


Best Student Poster Presentations on Thursday

    Omid Shekoofa, Tsinghua University, China,
    Th-P.001: Impacts of the annealing profile on AIC thin film solar cell characteristics fabricated by magnetron sputtering

    Zhang Wang, Institute of Semiconductors, CAS, China,
    Th-P.031: Novel Si-base horizontal InAs nanowire transistors

    Xinhe Wang, Tsinghua University, China,
    Th-P.078: A new directly placement method for CNT and strongly-coupled coupled nanotube electromechanical resonators

    Wen Wan, Xiamen University, China,
    Th-P.099: The topography control of epitaxial MoS2 crystals on graphene/SiO2

    Jianhong Xue, Peking University, China,
    Th-P.109: Quantum dot devices based on exfoliated MoS2 flakes

    Maxim Savchenko, Novosibirsk State University, Rzhanov Institute of Semiconductor Physics, Russia,
    Th-P.132: Weak antilocalization in 3D topological insulator, based on a strained HgTe film

    Fernando Gallego-Marcos, Instituto de Ciencia de Materiales de Madrid, CSIC, Spain,
    Th-P.155: Channel blockade in a two-path triple-quantum-dot system

    Fan Chen, Purdue University, USA,
    Th-P.157: Transport in vertically stacked hetero-structures from 2D materials

    Yuqing Huang, Linkoping University, Sweden,
    Th-P.194: Anisotropic nuclear quadrupole effect on electron spin depolarization in self-assembled InAs/GaAs quantum dot structures

    Volodymyr Handziuk, Forschungszentrum Julich, Peter Grunberg Insititute (PGI-8), Germany,
    Th-P.198: Effect of molecular layers on charge transport in nanowires

    Dongke Li, Nanjing University, China,
    Th-P.221: Doping effect in Si nanocrystals/SiO2 multilayers

    Dongfang Zhao, Shandong University, China,
    Th-P.222: Optical properties of nano-patterned GaAs wafers

    Carina B. Maliakkal, Tata Institute of Fundamental Research, India,
    Th-P.229: Understanding the band structure of wurtzite GaP: Studies on VLS-grown GaP nanowires

    Alexander Poshakinskiy, Ioffe Institute, Russia,
    Th-P.238: Biexciton-mediated photon blockade for multiple QDs in a microcavity

    Xue-Peng Wang, Jilin University, China,
    Th-P.261: Vacancy ordering driven melting behavior in cubic GeSbTe







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